Under glancing angle deposition, deposited atoms land primarily on the top of nanorods and their diffusion over the surface steps drives the increase of diameter. As a result, the less diffusion over surface steps, the smaller the nanorod diameter. Methods To demonstrate that the proposed mechanism is feasible, we grow Temsirolimus manufacturer Al nanorods by PVD while varying vacuum levels and LY2603618 substrate temperatures. Our results

indeed confirm that the proposed mechanism is feasible, that through its manipulation, Al nanorod diameter is possible, and that Al nanorods grown using this mechanism have the added benefit of thermal stability, which derives from a thin stable oxide shell. Before presenting the results, we will briefly describe the experimental methods. Al nanorods are grown using electron beam evaporation PVD at varied vacuum levels and varied MK-0457 concentration substrate temperatures. First, Si 100 substrates (Nova Electronic Materials, Flower Mound, TX, USA) are ultrasonically cleaned in acetone, ethanol, and de-ionized water (Millipore, Billerica,

MA, USA) and are subsequently placed onto a precision machined mount, for GLAD, at the top of the vacuum chamber. The vacuum chamber is a stainless steel tank that is approximately 40-cm tall and 25 cm in diameter – the source to substrate distance is approximately 30 cm. The source material 99.99% Al (Kurt J. Lesker, Jefferson Hills, PA, USA) is placed in a graphite liner in the electron beam source at the base of the vacuum chamber. For deposition at 1 × 10-2 Pa, the high vacuum stage, a turbo-molecular pump, is engaged for only 5 min, after the roughing pressure has been reached; the base pressure reaches 5 × 10 -3 Pa, and the working pressure is 1 × 10-2 Pa. The electron beam is then engaged and the deposition rate is monitored and controlled at 1.0 nm/s,

via quartz crystal microbalance, to a total nominal thickness of 500 nm. The thickness is measured perpendicular to the source flux, and the measurement represents that of a continuous film. For deposition at 1 × 10-5 Pa, DCLK1 the chamber is allowed to remain under high vacuum pumping for 24 h to reach a base pressure of 1 × 10 -5 Pa. To further improve the vacuum, the substrate is blocked from flux via a shutter and chromium (Cr) is deposited onto the chamber walls using the electron beam source. After the deposition of Cr, the base pressure is further improved to 1 × 10-6 Pa; the working pressure during deposition is 1 × 10-5 Pa. To reach a substrate temperature of 225 K, liquid nitrogen is flowed into the substrate holding fixture and the substrate temperature is measured with K-type thermocouple. The fixture and substrate are allowed to equilibrate to 225 K, and liquid nitrogen is added periodically to maintain the temperature, within a range of 200 to 250 K.