Weight reduction before the first pregnancy is generally indicated in obese women to prevent the above-mentioned complications of pregnancy and birth.”
“Films of polypropylene/organically modified montmorillonite (PP/OMMT) nanocomposites were drawn at two different temperatures with various draw

ratios. The effect of OMMT on the orientations of the crystalline and amorphous phases was studied using polarized infrared spectroscopy. It is found that OMMT layers always retard the orientation of the crystalline phase. The higher the OMMT loading, the stronger the retardance effect. In contrast, the effect of OMMT layers on the orientation of the amorphous phase depends on draw temperature and OMMT loading. A favorable effect on the orientation of the amorphous phase is observed at low OMMT loading and high draw temperature, but the retardance buy Belinostat click here prevails at high OMMT loading and low draw temperature. The favorable effect on orientation at high draw temperature is attributed to the stabilization effect of OMMT layers on the conformation of amorphous PP chains. Such an effect was further verified by comparing the crystallization behavior and the morphologies of drawn PP and PP/OMMT films crystallized from 180 degrees C. Memory effect is observed for crystallization of drawn PP/OMMT film, but it is not obvious for the drawn film of neat PP. Spherulites

are formed for orientated neat PP films cooled from 180 degrees C, but cylindrites are still formed after the drawn PP/OMMT films undergo melting at 180 degrees C and recrystallization. The stabilization effect disappears at higher temperature (230 degrees C). (C) 2011 Wiley Periodicals, Inc. J Appl Polym Sci 123: 3321-3330, 2012″
“HfO2-based devices employing various electrode

metals (Al, W, Pt, Cu, and Cr) were fabricated and characterized in order to examine the importance of the choice of metal electrode when sputter-depositing HfO2 films. It was found that metal-insulator-metal capacitors with CA3 manufacturer an Al bottom electrode exhibit a significantly smaller leakage current and a larger breakdown field strength than devices using W, Pt, Cu, and Cr electrodes. By examining HfO2/metal interfaces with x-ray photoelectron spectroscopy, it was found that metal electrodes are oxidized during the deposition of HfO2, resulting in interfacial oxide layers of the electrode metals (Al2O3, WO3, PtO, CuO, and Cr2O3+CrO3) between the metal electrode and the HfO2 layer. The formation of a metal oxide interlayer is a consequence of the high-energy oxygen ions generated during HfO2 sputtering. The difference in the device performance was attributed to the electronic properties of the oxide interlayers. It was found that when the oxide interlayers are semiconducting (e.g., WO3, PtO, CuO, or Cr2O3+CrO3), devices have high leakage currents and low breakdown field strengths, and an insulating oxide interlayer (Al2O3) enhances these device characteristics.