Conclusions We fabricated antireflective Si nanostructures by a simple nanofabrication technique using spin-coated Ag nanoparticles and a subsequent ICP etching process. Theoretical investigations based on RCWA method were carried out prior to fabrication to determine the effect of variations in height and period on the antireflection properties of Si nanostructures. https://www.selleckchem.com/products/pd-1-pd-l1-inhibitor-3.html Using the results from RCWA as a guideline, various Si nanostructures with different distribution, period, and height were fabricated by adjusting the Ag ink ratio and ICP etching conditions. It was found that the fabricated Si nanostructures significantly
reduced the surface reflection losses compared to bulk Si over a broad wavelength range. Si nanostructures fabricated using a 35% Ag ink ratio learn more and optimum ICP etching conditions showed excellent antireflection properties over a broad wavelength range as well as polarization- and angle-independent reflection properties. The antireflective Si nanostructures fabricated using this simple, fast, and cost-effective nanofabrication technique exhibits great potential for practical Si-based
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