CrossRef 7. Ninomiya T, Wei Z, Muraoka S, Yasuhara R, Katayama K, Takagi T: Conductive filament scaling of TaO x bipolar ReRAM for improving

data retention under low operation current. IEEE Trans Electron Devices 2013, 60:1384.CrossRef check details 8. Rahaman S, Maikap S, Tien TC, Lee HY, Chen WS, Chen FT, Kao MJ, Tsai MJ: Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO x interface. Nanoscale Res Lett 2012, 7:345.CrossRef 9. Li Y, Lv H, Liu Q, Long S, Wang M, Xie H, Zhang K, Huoa Z, Liu M: Bipolar one diode-one resistor integration for high-density resistive memory applications. Nanoscale 2013, 5:4785.CrossRef 10. Nagata T, Haemori M, Yamashita Y, Yoshikawa H, Iwashita Y, Kobayashi K, Chikyow T: Bias application hard X-ray photoelectron spectroscopy study of forming process of Cu/HfO 2 /Pt resistive random access memory structure. Appl Phys Lett 2011, 99:223517–3.CrossRef 11. Celano U, Goux L, Opsomer K, Belmonte A, BIBW2992 Lapichino M, Detavirnier C, Jurczak M, CFTRinh-172 mouse Vandervorst W: Switching mechanism and reverse engineering of low power Cu-based resistive switching devices. Nanoscale 2013, 5:11187.CrossRef 12. Wu Y, Yu S, Lee B, Wong P: Low-power TiN/Al 2 O 3 /Pt resistive switching device with sub-20 μA switching current and gradual resistance

modulation. J Appl Phys 2011, 110:094104.CrossRef 13. Prakash A, Maikap S, Banerjee W, Jana D, Lai CS: Impact of electrically formed interfacial layer and improved memory characteristics of IrO x /high- κx /W structures containing AlO x , GdO through x , HfO x , and TaO x switching materials. Nanoscale Res Lett 2013, 8:379.CrossRef 14. Ho CH, Hsu CL, Chen CC, Liu JT, Wu CS, Huang CC, Hu C, Fu-Liang Y: 9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WO x film. Tech Dig Int Electron Devices Meet 2010, 19.1.1–19.1.4. 15. Chen YY, Goux L, Clima S, Govoreanu B, Degraeve R, Kar GS, Fantini A, Groeseneken G, Wouters DJ, Jurczak M: Endurance/retention trade-off on HfO 2 /metal cap 1T1R bipolar RRAM. IEEE Trans Electron Devices 2013, 60:1114.CrossRef 16. Kim

MJ, Baek IG, Ha YH, Baik SJ, Kim JH, Seong DJ, Kim SJ, Kwon YH, Lim CR, Park HK, Gilmer D, Kirsch P, Jammy R, Shin YG, Choi S, Chung C: Low power operating bipolar TMO ReRAM for sub 10 nm era. Tech Dig Int Electron Devices Meet 2010, 19.3.1–19.3.4. 17. Katsumata R, Kito M, Fukuzumi Y, Kido M, Tanaka H, Komori Y, Ishiduki M, Matsunami J, Fujiwara T, Nagata Y: Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices. Tech Dig Symp VLSI Technol 2009, 136–137. 18. Kim W, Choi S, Sung J, Lee T, Park C, Ko H, Jung J, Yoo I, Park Y: Multi-layered vertical gate NAND flash overcoming stacking limit for terabit density storage. Tech Dig Symp VLSI Technol 2009, 188–199. 19.